Semiconductor package and fabrication method thereof

ABSTRACT

A semiconductor package is provided, which includes: a circuit structure having a first bottom surface and a first top surface opposite to the first bottom surface; at least a semiconductor element disposed on the first top surface of the circuit structure and electrically connected to the circuit structure; an encapsulant formed on the first top surface of the circuit structure to encapsulate the semiconductor element, wherein the encapsulant has a second bottom surface facing the first top surface of the circuit structure and a second top surface opposite to the second bottom surface; and a strengthening layer formed on the second top surface of the encapsulant, or formed between the circuit structure and the encapsulant, or formed on the first bottom surface of the circuit structure, thereby effectively preventing the encapsulant from warping and the semiconductor element from cracking.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor packages and fabricationmethods thereof, and more particularly, to a semiconductor packagehaving a strengthening layer and a fabrication method thereof.

2. Description of Related Art

Flip-chip technologies facilitate to reduce chip packaging sizes andshorten signal transmission paths and therefore have been widely usedfor chip packaging. Various types of packages such as chip scalepackages (CSPs), direct chip attached (DCA) packages and multi-chipmodule (MCM) packages can be achieved through flip-chip technologies.

In a flip-chip packaging process, a big CTE (Coefficient of ThermalExpansion) mismatch between a chip and a substrate adversely affects theformation of joints between conductive bumps of the chip andcorresponding contacts of the substrate and easily causes delaminationof the conductive bumps from the substrate.

Further, along with increased integration of integrated circuits, theCTE mismatch between the chip and the substrate induces more thermalstresses and leads to more serious warpage, thereby reducing thereliability of electrical connection between the chip and the substrateand resulting in failure of a reliability test.

Accordingly, a silicon interposer is provided between the substrate andthe chip. Since the silicon interposer is close in material to the chip,the above-described drawbacks caused by a CTE mismatch can beeffectively overcome.

FIG. 1 is a schematic cross-sectional view of a conventionalsemiconductor package 1 having a silicon interposer. Referring to FIG.1, the semiconductor package 1 has a substrate 10; a silicon interposer11 disposed on the substrate 10 through a plurality of solder balls 12;a UBM (Under Bump Metallurgy) layer 13 formed on the silicon interposer11; and a chip 14 disposed on the silicon interposer 11 through aplurality of solder balls 15.

The substrate 10 has a first surface 10 a having a plurality of bondingpads 101 and a second surface 10 b opposite to the first surface 10 aand having a plurality of bonding pads 102.

The silicon interposer 11 has a bottom surface 11 a and an opposite topsurface 11 b. Further, the silicon interposer 11 has a first circuitlayer 111 formed on the bottom surface 11 a, a second circuit layer 112formed on the top surface 11 b, and a plurality of through silicon vias(TSVs) 113 penetrating the bottom surface 11 a and the top surface 11 band electrically connecting the first circuit layer 111 and the secondcircuit layer 112. Furthermore, a first insulating layer 114 is formedon the bottom surface 11 a and the first circuit layer 111 and a secondinsulating layer 115 is formed on the top surface 11 b and the secondcircuit layer 112.

The silicon interposer 11 is disposed on the substrate 10 with thesolder balls 12 electrically connecting the substrate 10 and the firstcircuit layer 111. The UBM layer 13 is formed on the second circuitlayer 112. The chip 14 has a plurality of bonding pads 141 that areelectrically connected to the second circuit layer 112 through thesolder balls 15 and the UBM layer 13.

The semiconductor package 1 overcomes the above-described drawbacks andhas a reduced size. For example, a substrate generally has a minimumline width/pitch of 12/12 um. When the I/O count of a semiconductor chipincreases, since the line width/pitch of the substrate cannot bereduced, the area of the substrate must be increased such that moretraces can be formed on the substrate and electrically connected to thesemiconductor chip having high I/O count. On the other hand, referringto FIG. 1, the chip 14 is disposed on the silicon interposer 11 havingTSVs 113 and electrically connected to the substrate 10 through thesilicon interposer 11. Through a semiconductor process, the siliconinterposer 11 can have a line width/pitch of 3/3 um or less. Therefore,the area of the silicon interposer 11 is sufficient for electricalconnection with the chip 14 having high I/O count and hence the area ofthe substrate 10 does not need to be increased. Further, the fine linewidth/pitch of the silicon interposer 11 facilitates to shorten theelectrical transmission path. Therefore, the semiconductor chip 14disposed on the silicon interposer 11 achieves a higher electricaltransmission speed than if being directly disposed on the substrate 10.

However, the semiconductor package 1 having the silicon interposer 11has a high fabrication cost. Accordingly, Si substrate interconnectiontechnology has been developed to fabricate packages that do not includesilicon interposers and have a size less than the semiconductor package1.

FIGS. 2A to 2E are schematic cross-sectional views showing asemiconductor package 2 and a fabrication method thereof according tothe prior art.

Referring to FIG. 2A, a carrier 20 and a circuit structure 21 areprovided. The carrier 20 has a first surface 20 a and a second surface20 b opposite to the first surface 20 a. The circuit structure 21 has afirst bottom surface 21 a and a first top surface 21 b opposite to thefirst bottom surface 21 a. The circuit structure 21 has at least adielectric layer 211, a plurality of conductive vias 212 formed in thedielectric layer 211, and at least a circuit layer 213 and a pluralityof conductive pads 214 formed on the dielectric layer 211. Further, afirst insulating layer 22 is formed on the first bottom surface 21 a anda second insulating layer 23 is formed on the first top surface 21 b.The carrier 20 is disposed on the first insulating layer 22 via thesecond surface 20 b thereof, and a UBM layer 24 is formed on theconductive pads 214.

Referring to FIG. 2B, at least a chip 25 is provided, which has anactive surface 25 a with a plurality of bonding pads 251 and an inactivesurface 25 b opposite to the active surface 25 a. The chip 25 isdisposed on the UBM layer 24 through a plurality of solder balls 26.

Referring to FIG. 2C, an underfill 27 is formed between the chip 25 andthe second insulating layer 23.

Referring to FIG. 2D, an encapsulant 28 is formed on the secondinsulating layer 23. The encapsulant 28 has a second bottom surface 28 aand a second top surface 28 b opposite to the second bottom surface 28a.

Referring to FIG. 2E, the encapsulant 28 is thinned from the second topsurface 28 b thereof by mechanical grinding. Then, subsequent processsuch as thinning and etching of the carrier 20 can be performed.

In the above-described method of the semiconductor package 2, theencapsulant 28 is thinned to reduce warping of the encapsulant 28 causedby a big CTE mismatch between the encapsulant 28 (or underfill 27) andthe chip 25. Even further, the inactive surface 25 b of the chip 25 canbe exposed from the encapsulant 28 to improve the heat dissipatingeffect. However, the thinning process cannot effectively reduce warpingof the encapsulant 28. Consequently, cracking of the chip 25 easilyoccurs.

Therefore, there is a need to provide a semiconductor package and afabrication method thereof so as to overcome the above-describeddrawbacks.

SUMMARY OF THE INVENTION

In view of the above-described drawbacks, the present invention providesa semiconductor package, which comprises: a circuit structure having afirst bottom surface and a first top surface opposite to the firstbottom surface; at least a semiconductor element disposed on the firsttop surface of the circuit structure and electrically connected to thecircuit structure; an encapsulant formed on the first top surface of thecircuit structure to encapsulate the semiconductor element, wherein theencapsulant has a second bottom surface facing the first top surface ofthe circuit structure and a second top surface opposite to the secondbottom surface; and a strengthening layer formed on the second topsurface of the encapsulant, or formed between the circuit structure andthe encapsulant, or formed on the first bottom surface of the circuitstructure.

If the strengthening layer is formed on the second top surface of theencapsulant or formed between the circuit structure and the encapsulant,the semiconductor package can further comprise a first insulating layerformed on the first bottom surface of the circuit structure and having aplurality of first through holes for exposing a plurality of conductivevias of the circuit structure. The package can further comprise aplurality of second conductive pads formed on the first insulating layerand in the first through holes and electrically connected to theconductive vias of the circuit structure.

If the strengthening layer is formed on the second top surface of theencapsulant, the semiconductor package can further comprise aninsulating layer formed on the strengthening layer. The package canfurther comprise an adhesive layer formed between the encapsulant andthe strengthening layer.

If the strengthening layer is formed between the circuit structure andthe encapsulant, the strengthening layer can have a plurality ofopenings for exposing a plurality of first conductive pads of thecircuit structure.

If the strengthening layer is formed on the first bottom surface of thecircuit structure, the semiconductor package can further comprise afirst insulating layer formed between the circuit structure and thestrengthening layer, and a plurality of second through holes penetratingthe strengthening layer and the first insulating layer and exposing aplurality of conductive vias of the circuit structure. The package canfurther comprise an insulating layer formed on the strengthening layerand wall surfaces of the second through holes. The package can furthercomprise a plurality of second conductive pads formed on the insulatinglayer and in the second through holes and electrically connected to theconductive vias of the circuit structure.

The package can further comprise a second insulating layer formed on thefirst top surface of the circuit structure and exposing a plurality offirst conductive pads of the circuit structure.

The package can further comprise a UBM (Under Bump Metallurgy) layerformed on a plurality of first conductive pads of the circuit structure,and a plurality of conductive elements formed between the semiconductorelement and the UBM layer.

The package can further comprise an underfill formed on an activesurface of the semiconductor element for encapsulating the UBM layer andthe conductive elements.

The present invention further provides a method for fabricating asemiconductor package, which comprises the steps of: providing a circuitstructure having a first bottom surface and a first top surface oppositeto the first bottom surface; disposing at least a semiconductor elementon the first top surface of the circuit structure, wherein thesemiconductor element is electrically connected to the circuitstructure; forming an encapsulant on the first top surface of thecircuit structure to encapsulate the semiconductor element, wherein theencapsulant has a second bottom surface facing the first top surface ofthe circuit structure and a second top surface opposite to the secondbottom surface; thinning the encapsulant from the second top surfacethereof; and forming a strengthening layer on the second top surface ofthe encapsulant.

The above-described method can further comprise: forming a firstinsulating layer on the first bottom surface of the circuit structure;disposing a carrier on the first insulating layer, wherein the carrierhas a first surface and a second surface opposite to the first surfaceand facing the first insulating layer; after thinning the encapsulant,thinning the carrier from the first surface thereof; removing theremaining portion of the carrier by etching so as to expose the firstinsulating layer; forming a plurality of first through holes in thefirst insulating layer to expose a plurality of conductive vias of thecircuit structure;

and forming on the first insulating layer and in the first through holesa plurality of second conductive pads that are electrically connected tothe conductive vias of the circuit structure.

The above-described method can further comprise: forming an insulatinglayer on the strengthening layer; and forming an adhesive layer betweenthe encapsulant and the strengthening layer.

The present invention provides another method for fabricating asemiconductor package, which comprises the steps of: providing a circuitstructure having a first bottom surface and a first top surface oppositeto the first bottom surface; forming a strengthening layer on the firsttop surface of the circuit structure; disposing at least a semiconductorelement on the strengthening layer, wherein the semiconductor element iselectrically connected to the circuit structure; forming an encapsulanton the strengthening layer to encapsulate the semiconductor element,wherein the encapsulant has a second bottom surface facing thestrengthening layer and a second top surface opposite to the secondbottom surface; and thinning the encapsulant from the second top surfacethereof

The above-described method can further comprise: forming a firstinsulating layer on the first bottom surface of the circuit structure;disposing a carrier on the first insulating layer, wherein the carrierhas a first surface and a second surface opposite to the first surfaceand facing the first insulating layer; after thinning the encapsulant,thinning the carrier from the first surface thereof; removing theremaining portion of the carrier by etching so as to expose the firstinsulating layer; forming a plurality of first through holes in thefirst insulating layer to expose a plurality of conductive vias of thecircuit structure; and forming on the first insulating layer and in thefirst through holes a plurality of second conductive pads that areelectrically connected to the conductive vias of the circuit structure.

In the above-described method, the strengthening layer can have aplurality of openings for exposing a plurality of first conductive padsof the circuit structure.

The present invention provides a further method for fabricating asemiconductor package, which comprises the steps of: providing a circuitstructure having a first bottom surface and a first top surface oppositeto the first bottom surface; disposing at least a semiconductor elementon the first top surface of the circuit structure, wherein thesemiconductor element is electrically connected to the circuitstructure; forming an encapsulant on the first top surface of thecircuit structure to encapsulate the semiconductor element, wherein theencapsulant has a second bottom surface facing the first top surface ofthe circuit structure and a second top surface opposite to the secondbottom surface; thinning the encapsulant from the second top surfacethereof; and forming a strengthening layer on the first bottom surfaceof the circuit structure.

In the above-described method, forming the strengthening layer cancomprise: forming a first insulating layer on the first bottom surfaceof the circuit structure; disposing a carrier on the first insulatinglayer, wherein the carrier has a first surface and a second surfaceopposite to the first surface and facing the first insulating layer; andafter thinning the encapsulant, thinning the carrier from the firstsurface thereof so as to use the remaining portion of the carrier as thestrengthening layer.

Before thinning the encapsulant, the above-described method can furthercomprise forming an etch stop layer in the carrier at a predetermineddepth, allowing the carrier to be thinned according to the etch stoplayer; forming a plurality of second through holes penetrating thestrengthening layer and the first insulating layer and exposing aplurality of conductive vias of the circuit structure; forming aninsulating layer on the strengthening layer and wall surfaces of thesecond through holes; and forming a plurality of second conductive padson the insulating layer and in the second through holes and electricallyconnected to the conductive vias of the circuit structure.

The above-described three methods can further comprise forming a secondinsulating layer on the first top surface of the circuit structure,wherein a plurality of first conductive pads of the circuit structureare exposed from the second insulating layer; forming a UBM layer on thefirst conductive pads of the circuit structure; forming a plurality ofconductive elements between the semiconductor element and the UBM layer;and forming an underfill on an active surface of the semiconductorelement to encapsulate the UBM layer and the conductive elements.

In the above-described package and methods, the circuit structure cancomprise at least a dielectric layer, a plurality of conductive viasformed in the dielectric layer, and at least a circuit layer formed onthe dielectric layer and electrically connected to the conductive vias,and the circuit layer has a plurality of first conductive pads.

The strengthening layer can be made of an elastic material, a buffermaterial or a semiconductor material. If the strengthening layer isformed on the second top surface of the encapsulant or formed on thefirst bottom surface of the circuit structure, the strengthening layercan be made of silicon. If the strengthening layer is formed between thecircuit structure and the encapsulant, the strengthening layer can bemade of polybenzoxazole (PBO).

According to the present invention, a strengthening layer is formed onthe second top surface of the encapsulant, or between the circuitstructure and the encapsulant, or on the first bottom surface of thecircuit structure. As such, if there is a big CTE mismatch between theencapsulant (or underfill) and the semiconductor element and theencapsulant needs to be thinned, the strengthening layer can alleviatethe stress of the encapsulant (or underfill) and effectively reducewarping of the encapsulant and cracking of the semiconductor element,thereby improving the reliability of the semiconductor package.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional view of a conventionalsemiconductor package;

FIGS. 2A to 2E are schematic cross-sectional views showing anothersemiconductor package and a fabrication method thereof according to theprior art;

FIGS. 3A to 3I are schematic cross-sectional views showing asemiconductor package and a fabrication method thereof according to afirst embodiment of the present invention;

FIGS. 4A to 4I are schematic cross-sectional views showing asemiconductor package and a fabrication method thereof according to asecond embodiment of the present invention; and

FIGS. 5A to 5H are schematic cross-sectional views showing asemiconductor package and a fabrication method thereof according to athird embodiment of the present invention, wherein FIG. 5D′ showsanother embodiment of FIG. 5D.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The following illustrative embodiments are provided to illustrate thedisclosure of the present invention, these and other advantages andeffects can be apparent to those in the art after reading thisspecification.

It should be noted that all the drawings are not intended to limit thepresent invention. Various modifications and variations can be madewithout departing from the spirit of the present invention. Further,terms such as “first”, “second”, “top”, “bottom”, “on”, “a” etc. aremerely for illustrative purposes and should not be construed to limitthe scope of the present invention.

FIGS. 3A to 3I are schematic cross-sectional views showing asemiconductor package 3 a and a fabrication method thereof according toa first embodiment of the present invention.

Referring to FIG. 3A, a carrier 30 and a circuit structure 31 areprovided. The carrier 30 20 has a first surface 30 a and a secondsurface 30 b opposite to the first surface 30 a. The circuit structure31 has a first bottom surface 31 a and a first top surface 31 b oppositeto the first bottom surface 31 a. The circuit structure 31 has at leasta dielectric layer 311, a plurality of conductive vias 312 formed in thedielectric layer 311, and at least a circuit layer 313 formed on thedielectric layer 311 and electrically connected to the conductive vias312. Further, the circuit layer 313 has a plurality of first conductivepads 314.

A first insulating layer 32 is formed on the first bottom surface 31 aof the circuit structure 31 and a second insulating layer 33 is formedon the first top surface 31 b of the circuit structure 31, and the firstconductive pads 314 of the circuit structure 31 are exposed from thesecond insulating layer 33.

The carrier 30 is disposed on the first insulating layer 32 via thesecond surface 30 b thereof, and a UBM layer 34 is formed on the firstconductive pads 314.

Referring to FIG. 3B, at least a semiconductor element 35 such as a chipis disposed on the second insulating layer 33 and electrically connectedto the circuit structure 31. In other embodiments, the second insulatinglayer 33 can be dispensed with and the semiconductor element 35 isdirectly disposed on the first top surface 31 b of the circuit structure31.

The semiconductor element 35 has an active surface 35 a with a pluralityof bonding pads 351 and an inactive surface 35 b opposite to the activesurface 35 a. A plurality of first conductive elements 36 such as solderballs are formed between the bonding pads 351 of the semiconductorelements 35 and the UBM layer 34. As such, the semiconductor element 35is electrically connected to the first conductive pads 314 of thecircuit structure 31 through the first conductive elements 36 and theUBM layer 34.

Then, an underfill 37 is formed between the active surface 35 a of thesemiconductor element 35 and the second insulating layer 33 toencapsulate the UBM layer 34 and the first conductive elements 36. Inthe present embodiment, the underfill 37 has two portionscorrespondingly formed between two semiconductor elements 35 and thesecond insulating layer 33 and separated from one another. In otherembodiments, the underfill 37 between the semiconductor elements 35 andthe second insulating layer 33 can be in the form of a single piece. Inaddition, the underfill 37 can be dispensed with.

Referring to FIG. 3C, an encapsulant 38 is formed on the secondinsulating layer 33 to encapsulate the semiconductor element 35 and theunderfill 37. The encapsulant 38 has a second bottom surface 38 a facingthe second insulating layer 33 and a second top surface 38 b opposite tothe second bottom surface 38 a. In other embodiments, the secondinsulating layer 33 can be dispensed with and the encapsulant 38 isdirectly formed on the first top surface 31 b of the circuit structure31, and the second bottom surface 38 a of the encapsulant 38 faces thefirst top surface 31 b of the circuit structure 31.

Referring to FIG. 3D, by performing such as a grinding process (forexample, mechanical grinding), the encapsulant 38 is thinned from thesecond top surface 38 b to such an extent that the second top surface 38b of the encapsulant 38 is close in position to the inactive surface 35b of the semiconductor element 35. In other embodiments, the encapsulant38 can be thinned to such an extent that the second top surface 38 b ofthe encapsulant 38 is flush with and exposes the inactive surface 35 bof the semiconductor element 35.

Referring to FIG. 3E, a strengthening layer 39 is formed on the secondtop surface 38 b of the encapsulant 38. The strengthening layer 39 ismade of, but not limited to, a semiconductor material, for example,silicon.

In the present embodiment, an insulating layer 40 is further formed onthe strengthening layer 39, and an adhesive layer 41 is formed betweenthe second top surface 38 b of the encapsulant 38 and the strengtheninglayer 39.

Referring to FIG. 3F, the carrier 30 is thinned from the first surface30 a thereof by such as grinding.

Referring to FIG. 3G the remaining portion of the carrier 30 is removedby such as etching so as to expose the first insulating layer 32. Theetching can be, but not limited to, a chemical etching, a wet etching ora reactive ion etching (RIE).

Referring to FIG. 3H, a plurality of first through holes 321 are formedin the first insulating layer 32 to expose the conductive vias 312 ofthe circuit structure 31.

Referring to FIG. 3I, a plurality of second conductive pads 42 areformed on the first insulating layer 32 and in the first through holes321 and electrically connected to the conductive vias 312 of the circuitstructure 31. Then, a plurality of second conductive elements 43 such assolder balls are formed on the second conductive pads 42. As such, asemiconductor package 3 a is obtained.

FIGS. 4A to 4I are schematic cross-sectional views showing asemiconductor package 3 b and a fabrication method thereof according toa second embodiment of the present invention. The difference of thepresent embodiment from the first embodiment is described as follows.

Referring to FIG. 4A, the UBM layer 34 of FIG. 3A is not formed on thefirst conductive pads 314.

Referring to FIG. 4B, a strengthening layer 39 is formed on the secondinsulating layer 33. Alternatively, the second insulating layer 33 canbe dispensed with and the strengthening layer 39 is directly formed onthe first top surface 31 b of the circuit structure 31. Thestrengthening layer 39 has a plurality of openings 391 for exposing thefirst conductive pads 314. The strengthening layer 39 can be made of anelastic material or a buffer material, for example, polybenzoxazole(PBO), and have a thickness of several tens of micrometers.

Referring to FIG. 4C, a UBM layer 34 is formed on the strengtheninglayer 39 and in the openings 391 and electrically connected to the firstconductive pads 314. Referring to FIG. 4D, an underfill 37 is formedbetween the active surfaces 35 a of at least two semiconductor elements35 and the second insulating layer 33 as a single piece.

Referring to FIG. 4E, an encapsulant 38 is formed on the strengtheninglayer 39 to encapsulate the semiconductor elements 35 and the underfill37. The strengthening layer 39 is positioned between the secondinsulating layer 33 and the encapsulant 38 (or underfill 37). In otherembodiments, the second insulating layer 33 can be dispensed with andhence the strengthening layer 39 is positioned between the circuitstructure 31 and the encapsulant 38 (or underfill 37).

Referring to FIG. 4F, the encapsulant 38 is thinned to expose theinactive surfaces 35 b of the semiconductor elements 35, therebystrengthening the heat dissipating effect of the semiconductor elements35.

FIGS. 5A to 5H are schematic cross-sectional views showing asemiconductor package 3 c and a fabrication method thereof according toa third embodiment of the present invention. Therein, FIG. 5D′ showsanother embodiment of FIG. 5D. The difference of the present embodimentfrom the first embodiment is described as follows.

Referring to FIG. 5B, the underfill 37 of FIG. 3B is dispensed with.Referring to FIG. 5C, an encapsulant 38 is directly formed between theactive surfaces 35 a of the semiconductor elements 35 and the secondinsulating layer 33 to encapsulate the UBM layer 34 and the firstconductive elements 36.

Referring to FIGS. 5D and 5E, after the encapsulant 38 is thinned, thecarrier 30 is thinned and the remaining portion of the carrier 30 servesas a strengthening layer 39. As such, the strengthening layer 39 ispositioned on the first bottom surface 31 a of the circuit structure 31.The strengthening layer 39, i.e. the carrier 30, is made of asemiconductor material such as silicon, and has a thickness of 5 to 20um.

In particular, fabricating the strengthening layer 39 includes: forminga first insulating layer 32 on the first bottom surface 31 a of thecircuit structure 31 and disposing a carrier 30 having opposite firstand second surfaces 30 a, 30 b on the first insulating layer 32 (asshown in FIG. 5A); after thinning the encapsulant 38, thinning thecarrier 30 from the first surface 30 a thereof so as to use theremaining portion of the carrier 30 as the strengthening layer 39 (asshown in FIGS. 5D and 5E).

In an embodiment, referring to FIG. 5D′, before the carrier 30 isthinned, an ion implantation process is performed to form an etch stoplayer 44 in the carrier 30 at a predetermined depth. As such, thecarrier 30 is thinned by etching according to the etch stop layer 44 soas to have a predetermined thickness.

Referring to FIG. 5F, a plurality of second through holes 392 are formedto penetrate the strengthening layer 39 and the first insulating layer32 and expose the conductive vias 312 of the circuit structure 32.

Referring to FIG. 5G an insulating layer 40 is formed on thestrengthening layer 39 and wall surfaces of the second through holes392.

Referring to FIG. 5H, a plurality of second conductive pads 42 areformed on the insulating layer 40 and in the second through holes 392and electrically connected to the conductive vias 312 of the circuitstructure 31. The insulating layer 40 is used to prevent a short circuitor electrical interference from occurring between adjacent secondconductive pads 42.

The present invention further provides a semiconductor package 3 a, asshown in FIG. 31. The semiconductor package 3 a has: a circuit structure31 having a first bottom surface 31 a and a first top surface 31 bopposite to the first bottom surface 31 a; at least a semiconductorelement 35 such as a chip disposed on the first top surface 31 b of thecircuit structure 31 and electrically connected to the circuit structure31; an encapsulant 38 formed on the first top surface 31 b of thecircuit structure 31 to encapsulate the semiconductor element 35,wherein the encapsulant 38 has a second bottom surface 38 a facing thefirst top surface 31 b of the circuit structure 31 and a second topsurface 38 b opposite to the second bottom surface 38 a; and astrengthening layer 39 formed on the second top surface 38 b of theencapsulant 38.

The circuit structure 31 can have at least a dielectric layer 311, aplurality of conductive vias 312 formed in the dielectric layer 311, andat least a circuit layer 313 formed on the dielectric layer 311 andelectrically connected to the conductive vias 312. The circuit layer 313has a plurality of first conductive pads 314.

The semiconductor element 35 can have an active surface 35 a having aplurality of bonding pads 351 and an inactive surface 35 b opposite tothe active surface 35 a.

The strengthening layer 39 can be made of a semiconductor material suchas silicon.

The semiconductor package 3 a can further have a first insulating layer32 formed on the first bottom surface 31 a of the circuit structure 31and having a plurality of first through holes 321 for exposing theconductive vias 312 of the circuit structure 31.

The semiconductor package 3 a can further have a plurality of secondconductive pads 42 formed on the first insulating layer 32 and in thefirst through holes 321 and electrically connected to the conductivevias 312 of the circuit structure 31.

The semiconductor package 3 a can further have an insulating layer 40formed on the strengthening layer 39, and an adhesive layer 41 formedbetween the second top surface 38 b of the encapsulant 38 and thestrengthening layer 39.

The semiconductor package 3 a can further have a UBM layer 34 formed onthe first conductive pads 314 of the circuit structure 31, and aplurality of first conductive elements 36 such as solder balls formedbetween the bonding pads 351 of the semiconductor element 35 and the UBMlayer 34. As such, the semiconductor element 35 is electricallyconnected to the first conductive pads 314 of the circuit structure 31through the first conductive elements 36 and the UBM layer 34.

The semiconductor package 3 a can further have an underfill 37 formed onthe active surface 35 a of the semiconductor element 35 forencapsulating the UBM layer 34 and the first conductive elements 36. Theencapsulant 38 encapsulates the underfill 37.

In the present embodiment, the underfill 37 has two portionscorrespondingly formed between the two semiconductor elements 35 and thesecond insulating layer 33 and separated from one another. In otherembodiments, the underfill 37 between the two semiconductor elements 35and the second insulating layer 33 can be in the form of a single piece.In addition, the underfill 37 can be dispensed with.

The semiconductor package 3 a can further have a second insulating layer33 formed on the first top surface 3 lb of the circuit structure 31 andexposing the first conductive pads 314 of the circuit structure 31.

The semiconductor package 3 a can further have a plurality of secondconductive elements 43 such as solder balls formed on the secondconductive pads 42.

The present invention further provides a semiconductor package 3 b, asshown in FIG. 4I. The difference of the semiconductor package 3 b fromthe semiconductor package 3 a is described as follows.

Referring to FIG. 4I, the strengthening layer 39 is formed between thesecond insulating layer 33 and the encapsulant 38 (or underfill 37).Alternatively, the second insulating layer 33 can be dispensed with andthe strengthening layer 39 is formed between the first top surface 31 bof the circuit structure 31 and the encapsulant 38 (or underfill 37).

The strengthening layer 39 can have a plurality of openings 391 forexposing the first conductive pads 314. The strengthening layer 39 canbe made of an elastic material or a buffer material, for example,polybenzoxazole (PBO).

In the present embodiment, the underfill 37 is formed between the atleast two semiconductor elements 35 and the second insulating layer 33as a single piece.

The present invention further provides a semiconductor package 3 c, asshown in FIG. 5H. The difference of the semiconductor package 3 c fromthe semiconductor package 3 a is described as follows.

Referring to FIG. 5H, the strengthening layer 39 is formed on the firstbottom surface 31 a of the circuit structure 31. The semiconductor layer39 can be made of a semiconductor material such as silicon.

The semiconductor package 3 c can further have a first insulating layer32 formed between the first bottom surface 31 a of the circuit structure31 and the strengthening layer 39, and a plurality of second throughholes 392 penetrating the strengthening layer 39 and the firstinsulating layer 32 and exposing the conductive vias 312 of the circuitstructure 31.

The semiconductor package 3 c can further have an insulating layer 40formed on the strengthening layer 39 and wall surfaces of the secondthrough holes 392.

The semiconductor package 3 c can further have a plurality of secondconductive pads 42 formed on the insulating layer 40 and in the secondthrough holes 392 and electrically connected to the conductive vias 312of the circuit structure 31. The insulating layer 40 can be used toprevent a short circuit or electrical interference from occurringbetween adjacent second conductive pads 42.

In the present embodiment, the underfill 37 between the semiconductorelements 35 and the second insulating layer 33 can be dispensed with.

According to the present invention, a strengthening layer is formed onthe second top surface of the encapsulant, or between the circuitstructure and the encapsulant, or on the first bottom surface of thecircuit structure. As such, if there is a big CTE mismatch between theencapsulant (or underfill) and the semiconductor element and theencapsulant needs to be thinned, the strengthening layer can alleviatethe stress of the encapsulant (or underfill) and effectively reducewarping of the encapsulant and cracking of the semiconductor element,thereby improving the reliability of the semiconductor package.

The above-described descriptions of the detailed embodiments are only toillustrate the preferred implementation according to the presentinvention, and it is not to limit the scope of the present invention.Accordingly, all modifications and variations completed by those withordinary skill in the art should fall within the scope of presentinvention defined by the appended claims.

What is claimed is:
 1. A semiconductor package, comprising: a circuitstructure having a first bottom surface and a first top surface oppositeto the first bottom surface; at least a semiconductor element disposedon the first top surface of the circuit structure and electricallyconnected to the circuit structure; an encapsulant formed on the firsttop surface of the circuit structure to encapsulate the semiconductorelement, wherein the encapsulant has a second bottom surface facing thefirst top surface of the circuit structure and a second top surfaceopposite to the second bottom surface; and a strengthening layer formedon the second top surface of the encapsulant, or formed between thecircuit structure and the encapsulant, or formed on the first bottomsurface of the circuit structure.
 2. The semiconductor package of claim1, wherein the circuit structure comprises at least a dielectric layer,a plurality of conductive vias formed in the dielectric layer, and atleast a circuit layer formed on the dielectric layer and electricallyconnected to the conductive vias, the circuit layer having a pluralityof first conductive pads.
 3. The semiconductor package of claim 1, whenthe strengthening layer is formed on the second top surface of theencapsulant or formed between the circuit structure and the encapsulant,further comprising a first insulating layer formed on the first bottomsurface of the circuit structure and having a plurality of first throughholes for exposing a plurality of conductive vias of the circuitstructure.
 4. The semiconductor package of claim 3, further comprising aplurality of second conductive pads formed on the first insulating layerand in the first through holes and electrically connected to theconductive vias of the circuit structure.
 5. The semiconductor packageof claim 1, when the strengthening layer is formed on the second topsurface of the encapsulant, further comprising an insulating layerformed on the strengthening layer.
 6. The semiconductor package of claim5, further comprising an adhesive layer formed between the encapsulantand the strengthening layer.
 7. The semiconductor package of claim 1,when the strengthening layer is formed between the circuit structure andthe encapsulant, the strengthening layer has a plurality of openings forexposing a plurality of first conductive pads of the circuit structure.8. The semiconductor package of claim 1, when the strengthening layer isformed on the first bottom surface of the circuit structure, furthercomprising a first insulating layer formed between the circuit structureand the strengthening layer, and a plurality of second through holespenetrating the strengthening layer and the first insulating layer andexposing a plurality of conductive vias of the circuit structure.
 9. Thesemiconductor package of claim 8, further comprising an insulating layerformed on the strengthening layer and wall surfaces of the secondthrough holes.
 10. The semiconductor package of claim 9, furthercomprising a plurality of second conductive pads formed on theinsulating layer and in the second through holes and electricallyconnected to the conductive vias of the circuit structure.
 11. Thesemiconductor package of claim 1, further comprising a second insulatinglayer formed on the first top surface of the circuit structure andexposing a plurality of first conductive pads of the circuit structure.12. The semiconductor package of claim 1, further comprising a UBM layerformed on a plurality of first conductive pads of the circuit structure,and a plurality of conductive elements formed between the semiconductorelement and the UBM layer.
 13. The semiconductor package of claim 12,further comprising an underfill formed on an active surface of thesemiconductor element for encapsulating the UBM layer and the conductiveelements.
 14. The semiconductor package of claim 1, wherein thestrengthening layer is made of an elastic material, a buffer material ora semiconductor material.
 15. The semiconductor package of claim 1,wherein when the strengthening layer is formed on the second top surfaceof the encapsulant or formed on the first bottom surface of the circuitstructure, the strengthening layer is made of silicon.
 16. Thesemiconductor package of claim 1, wherein when the strengthening layeris formed between the circuit structure and the encapsulant, thestrengthening layer is made of polybenzoxazole (PBO).
 17. A method forfabricating a semiconductor package, comprising the steps of: providinga circuit structure having a first bottom surface and a first topsurface opposite to the first bottom surface; disposing at least asemiconductor element on the first top surface of the circuit structure,wherein the semiconductor element is electrically connected to thecircuit structure; forming an encapsulant on the first top surface ofthe circuit structure to encapsulate the semiconductor element, whereinthe encapsulant has a second bottom surface facing the first top surfaceof the circuit structure and a second top surface opposite to the secondbottom surface; thinning the encapsulant from the second top surfacethereof; and forming a strengthening layer on the second top surface ofthe encapsulant.
 18. The method of claim 17, wherein the circuitstructure comprises at least a dielectric layer, a plurality ofconductive vias formed in the dielectric layer, and at least a circuitlayer formed on the dielectric layer and electrically connected to theconductive vias, the circuit layer having a plurality of firstconductive pads.
 19. The method of claim 17, further comprising: forminga first insulating layer on the first bottom surface of the circuitstructure; and disposing a carrier on the first insulating layer,wherein the carrier has a first surface and a second surface opposite tothe first surface and facing the first insulating layer.
 20. The methodof claim 19, further comprising: after thinning the encapsulant,thinning the carrier from the first surface thereof; and removing aremaining portion of the carrier by etching so as to expose the firstinsulating layer.
 21. The method of claim 20, further comprising:forming a plurality of first through holes in the first insulating layerto expose a plurality of conductive vias of the circuit structure; andforming on the first insulating layer and in the first through holes aplurality of second conductive pads that are electrically connected tothe conductive vias of the circuit structure.
 22. The method of claim17, further comprising forming an insulating layer on the strengtheninglayer.
 23. The method of claim 22, further comprising forming anadhesive layer between the encapsulant and the strengthening layer. 24.The method of claim 17, further comprising forming a second insulatinglayer on the first top surface of the circuit structure, wherein aplurality of first conductive pads of the circuit structure are exposedfrom the second insulating layer.
 25. The method of claim 24, furthercomprising: forming a UBM layer on the first conductive pads of thecircuit structure; and forming a plurality of conductive elementsbetween the semiconductor element and the UBM layer.
 26. The method ofclaim 25, further comprising forming an underfill on an active surfaceof the semiconductor element to encapsulate the UBM layer and theconductive elements.
 27. The method of claim 17, wherein thestrengthening layer is made of an elastic material, a buffer material ora semiconductor material.
 28. A method for fabricating a semiconductorpackage, comprising the steps of: providing a circuit structure having afirst bottom surface and a first top surface opposite to the firstbottom surface; forming a strengthening layer on the first top surfaceof the circuit structure; disposing at least a semiconductor element onthe strengthening layer, wherein the semiconductor element iselectrically connected to the circuit structure; forming an encapsulanton the strengthening layer to encapsulate the semiconductor element,wherein the encapsulant has a second bottom surface facing thestrengthening layer and a second top surface opposite to the secondbottom surface; and thinning the encapsulant from the second top surfacethereof.
 29. The method of claim 28, wherein the circuit structurecomprises at least a dielectric layer, a plurality of conductive viasformed in the dielectric layer, and at least a circuit layer formed onthe dielectric layer and electrically connected to the conductive vias,the circuit layer having a plurality of first conductive pads.
 30. Themethod of claim 28, further comprising: forming a first insulating layeron the first bottom surface of the circuit structure; and disposing acarrier on the first insulating layer, wherein the carrier has a firstsurface and a second surface opposite to the first surface and facingthe first insulating layer.
 31. The method of claim 30, furthercomprising: after thinning the encapsulant, thinning the carrier fromthe first surface thereof; and removing a remaining portion of thecarrier by etching so as to expose the first insulating layer.
 32. Themethod of claim 31, further comprising: forming a plurality of firstthrough holes in the first insulating layer to expose a plurality ofconductive vias of the circuit structure; and forming on the firstinsulating layer and in the first through holes a plurality of secondconductive pads that are electrically connected to the conductive viasof the circuit structure.
 33. The method of claim 28, wherein thestrengthening layer has a plurality of openings for exposing a pluralityof first conductive pads of the circuit structure.
 34. The method ofclaim 28, further comprising forming a second insulating layer on thefirst top surface of the circuit structure, wherein a plurality of firstconductive pads of the circuit structure are exposed from the secondinsulating layer.
 35. The method of claim 34, further comprising:forming a UBM layer on the first conductive pads of the circuitstructure; and forming a plurality of conductive elements between thesemiconductor element and the UBM layer.
 36. The method of claim 35,further comprising forming an underfill on an active surface of thesemiconductor element to encapsulate the UBM layer and the conductiveelements.
 37. The method of claim 28, wherein the strengthening layer ismade of an elastic material, a buffer material or a semiconductormaterial.
 38. A method for fabricating a semiconductor package,comprising the steps of: providing a circuit structure having a firstbottom surface and a first top surface opposite to the first bottomsurface; disposing at least a semiconductor element on the first topsurface of the circuit structure, wherein the semiconductor element iselectrically connected to the circuit structure; forming an encapsulanton the first top surface of the circuit structure to encapsulate thesemiconductor element, wherein the encapsulant has a second bottomsurface facing the first top surface of the circuit structure and asecond top surface opposite to the second bottom surface; thinning theencapsulant from the second top surface thereof; and forming astrengthening layer on the first bottom surface of the circuitstructure.
 39. The method of claim 38, wherein the circuit structurecomprises at least a dielectric layer, a plurality of conductive viasformed in the dielectric layer, and at least a circuit layer formed onthe dielectric layer and electrically connected to the conductive vias,the circuit layer having a plurality of first conductive pads.
 40. Themethod of claim 38, wherein forming the strengthening layer comprises:forming a first insulating layer on the first bottom surface of thecircuit structure; disposing a carrier on the first insulating layer,wherein the carrier has a first surface and a second surface opposite tothe first surface and facing the first insulating layer; and afterthinning the encapsulant, thinning the carrier from the first surfacethereof so as to use a remaining portion of the carrier as thestrengthening layer.
 41. The method of claim 40, before thinning theencapsulant, further comprising forming an etch stop layer in thecarrier at a predetermined depth, allowing the carrier to be thinnedaccording to the etch stop layer.
 42. The method of claim 41, furthercomprising forming a plurality of second through holes penetrating thestrengthening layer and the first insulating layer and exposing aplurality of conductive vias of the circuit structure.
 43. The method ofclaim 42, further comprising forming an insulating layer on thestrengthening layer and wall surfaces of the second through holes. 44.The method of claim 43, further comprising forming a plurality of secondconductive pads on the insulating layer and in the second through holesand electrically connected to the conductive vias of the circuitstructure.
 45. The method of claim 38, further comprising forming asecond insulating layer on the first top surface of the circuitstructure, wherein a plurality of first conductive pads of the circuitstructure are exposed from the second insulating layer.
 46. The methodof claim 45, further comprising: forming a UBM layer on the firstconductive pads of the circuit structure; and forming a plurality ofconductive elements between the semiconductor element and the UBM layer.47. The method of claim 46, further comprising forming an underfill onan active surface of the semiconductor element to encapsulate the UBMlayer and the conductive elements.
 48. The method of claim 38, whereinthe strengthening layer is made of an elastic material, a buffermaterial or a semiconductor material.